PAL-025 NSN Part by Bae Systems with NSN 5962-01-331-7106

Mfg Part Number: PAL-025	Alternate P/N: PAL025	NSN : 5962-01-331-7106
NIIN : 013317106	CAGE Code : K0978	Manufacturer: Bae Systems
Item Name : Microcircuit Memory	FSC : 5962 Microcircuits Electronic

Automated Procurement is a premier purchasing platform for PAL-025 NSN part and NSN products of the highest caliber, offering items like NSN 5962-01-331-7106 with PAL-025 part with competitive pricing and rapid lead-times. Listed with the description “Microcircuit Memory,” PAL-025 is manufactured by Bae Systems and is purchasable from our database at any time. If you are interested in receiving a quote for your comparisons that has been amply customized to meet your needs, fill out and submit an RFQ form at your earliest convenience and be sure to include as many details as you can regarding your needs.

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NSN Information for Part Number PAL-025 with NSN 5962-01-331-7106, 5962013317106

NSN	FSC	NIIN	CLS	Hazmat	DEMIL	Cancelled NSN
5962-01-331-7106 Item Description: Microcircuit Memory	5962	013317106	0	N	D
	CIIC	HCC	ESD	PMIC	Criticality	ENAC
	7		D	A	0
Part Number	ISC	RNVC	RNCC	HCC	MSDS	SADC
Pal-025	5	2	5

Characteristics Data of NSN 5962-01-331-7106, 5962013317106

MRC	Criteria	Characteristic
MEMORY	ADAU	BODY HEIGHT0 140 INCHES MINIMUM AND 0 185 INCHES MAXIMUM
MEMORY	CQSJ	INCLOSURE MATERIALCERAMIC
MEMORY	CWSG	TERMINAL SURFACE TREATMENTSOLDER
MEMORY	CZER	MEMORY DEVICE TYPEPAL
MEMORY	TEST	TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC
MEMORY	ADAQ	BODY LENGTH1 060 INCHES MAXIMUM
MEMORY	CQZP	INPUT CIRCUIT PATTERN16 INPUT
MEMORY	CZEN	VOLTAGE RATING AND TYPE PER CHARACTERISTIC5 0 VOLTS NOMINAL POWER SOURCE
MEMORY	ABKW	OVERALL HEIGHT0 400 INCHES MAXIMUM
MEMORY	ADAT	BODY WIDTH0 220 INCHES MINIMUM AND 0 310 INCHES MAXIMUM
MEMORY	AEHX	MAXIMUM POWER DISSIPATION RATING1 2 WATTS
MEMORY	AFGA	OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS
MEMORY	AFJQ	STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS
MEMORY	CBBL	FEATURES PROVIDEDBIPOLAR AND PROGRAMMABLE AND MONOLITHIC AND BIDIRECTIONAL
MEMORY	CQSZ	INCLOSURE CONFIGURATIONDUAL-IN-LINE
MEMORY	CQWX	OUTPUT LOGIC FORMBIPOLAR METAL-OXIDE SEMICONDUCTOR
MEMORY	CTFT	CASE OUTLINE SOURCE AND DESIGNATORD-8 MIL-M-38510
MEMORY	CTQX	CURRENT RATING PER CHARACTERISTIC12 00 MILLIAMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE NOT APPLICABLE
MEMORY	TTQY	TERMINAL TYPE AND QUANTITY20 PRINTED CIRCUIT